1 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs ws128k32-xg2txe december 2000 rev. 0 advanced* 128kx32 sram multichip package, radiation tollerant ttl compatible inputs and outputs built in decoupling caps and multiple ground pins for low noise operation weight ws128k32-xg2txe C 8 grams typical radiation tolerant with epitaxial layer on die. 6t memory cells provide excellent protection against soft errors * this product is under development, is not quali? ed or characterized and is subject to change or cancellation without notice. features access times of 35, 45, 55ns packaging ? 68 lead, 22.4mm cqfp (g2t), 4. 57mm (0.180"), (package 509) organized as 128kx32; user con? gurable as 256kx16 or 512kx8 low power data retention commercial, industrial and military temperature ranges 5v power supply low power cmos pin description i/o 0-31 data inputs/outputs a 0-16 address inputs we 1-4 # write enables cs 1-4 # chip selects oe# output enable v cc power supply gnd ground nc not connected block diagram top view figure 1 C pin configuration for ws128k32n-xg2txe we 1 #cs 1 #cs 2 #cs 3 #cs 4 # we 4 # we 3 # we 2 # 128k x 8 128k x 8 128k x 8 128k x 8 oe# a 0-16 i/o 0-7 i/o 24-31 i/o 16-23 i/o 8-15 8888 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 gnd i/o 8 i/o 9 i/o 10 i/o 11 i/o 12 i/o 13 i/o 14 i/o 15 i/o 16 i/o 17 i/o 18 i/o 19 i/o 20 i/o 21 i/o 22 i/o 23 gnd i/o 24 i/o 25 i/o 26 i/o 27 i/o 28 i/o 29 i/o 30 i/o 31 v cc a 11 a 12 a 13 a 14 a 15 a 16 cs 1 # oe# cs 2 # nc we 2 # we 3 # we 4 # nc nc nc nc a 0 a 1 a 2 a 3 a 4 a 5 cs 3 # gnd cs 4 # we 1 # a 6 a 7 a 8 a 9 a 10 v cc 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 the white 68 lead g2t cqfp ? lls the same ? t and function as the jedec 68 lead cqfj or 68 plcc. but the g2t has the tce and lead inspection advantage of the cqfp form.
2 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs ws128k32-xg2txe december 2000 rev. 0 advanced absolute maximum ratings parameter symbol min max unit operating temperature t a -55 +125 c storage temperature t stg -65 +150 c signal voltage relative to gnd v g -0.5 v cc +0.5 v junction temperature t j 150 c supply voltage v cc -0.5 7.0 v recommended operating conditions parameter symbol min max unit supply voltage v cc 4.5 5.5 v input high voltage v ih 2.2 v cc + 0.3 v input low voltage v il -0.3 +0.8 v opertating temp. (mil) t a -55 +125 c truth table cs# oe# we# mode data i/o power h x x standby high z standby l l h read data out active l x l write data in active l h h out disable high z active capacitance t a = +25c parameter symbol conditions max unit oe# capacitance c oe v in = 0v, f = 1.0 mhz 50 pf we 1-4 # capacitance cqfp g2t c we v in = 0v, f = 1.0 mhz 20 pf cs 1-4 # capacitance c cs v in = 0v, f = 1.0 mhz 20 pf data# i/o capacitance c i/o v i/o = 0v, f = 1.0 mhz 20 pf address input capacitance c ad v in = 0v, f = 1.0 mhz 50 pf this parameter is guaranteed by design but not tested. dc characteristics v cc = 5.0v, v ss = 0v, -55c t a +125c parameter sym conditions min max units input leakage current i li v cc = 5.5, v in = gnd to v cc 10 a output leakage current i lo cs# = v ih , oe# = v ih , v out = gnd to v cc 10 a operating supply current i cc cs# = v il , oe# = v ih , f = 5mhz, v cc = 5.5 520 ma standby current i sb cs# = v ih , oe# = v ih , f = 5mhz, v cc = 5.5 8 ma output low voltage v ol i ol = 8ma, v cc = 4.5 0.4 v output high voltage v oh i oh = -40ma, v cc = 4.5 2.4 v note: dc test conditions: v ih = v cc -0.3v, v il = 0.3v data retention characteristics -55c t a +125c characteristic sym conditions min max units data retention voltage data retention quiescent current v cc i ccdr v cc = 2.0v cs v cc -0.2v 2 1 v ma chip disable to data retention time (1) operation recovery time (1) t cdr t r v in v cc -0.2v or v in 0.2v 0 t rc ns ns note: parameter guaranteed, but not tested. radiation characteristics total dose (tm1019.5) latch-up 25c v cc max (mev/mg/cm2) seu let threshold (v cc min) (mev/mg/cm2) cross section /bit (e-6 cm2) functional parametric (krads) (krads) typical iccsb (ma ) 30 30 1.2 >100 2 0.2
3 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs ws128k32-xg2txe december 2000 rev. 0 advanced i current source d.u.t. c = 50 pf eff i ol v 1.5v (bipolar supply) z current source oh ac characteristics v cc = 5.0v, gnd = 0v, -55c t a +125c parameter write cycle symbol -35 -45 -55 units min max min max min max write cycle time t wc 35 45 55 ns chip select to end of write t cw 25 35 45 ns address valid to end of write t aw 25 35 45 ns data valid to end of write t dw 20 25 25 ns write pulse width t wp 25 35 45 ns address setup time t as 000ns address hold time t ah 000ns output active from end of write t ow 1 000ns write enable to output in high z t whz 1 10 15 20 ns data hold time t dh 000ns 1. this parameter is guaranteed by design but not tested. ac characteristics v cc = 5.0v, gnd = 0v, -55c t a +125c parameter read cycle symbol -35 -45 -55 units min max min max min max read cycle time t rc 35 45 55 ns address access time t aa 35 45 55 ns output hold from address change t oh 333ns chip select access time t acs 35 45 55 ns output enable to output valid t oe 15 20 30 ns chip select to output in low z t clz 1 333ns output enable to output in low z t olz 1 000ns chip disable to output in high z t chz 1 20 20 20 ns output disable to output in high z t ohz 1 12 15 20 ns 1. this parameter is guaranteed by design but not tested. figure 2 C ac test circuit notes: v z is programmable from -2v to +7v. i ol & i oh programmable from 0 to 16ma. tester impedance z0 = 75?. v z is typically the midpoint of v oh and v ol . i ol & i oh are adjusted to simulate a typical resistive load circuit. ate tester includes jig capacitance. ac test conditions parameter typ unit input pulse levels v il = 0, v ih = 3.0 v input rise and fall 5 ns input and output reference level 1.5 v output timing reference level 1.5 v
4 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs ws128k32-xg2txe december 2000 rev. 0 advanced ws32k32-xhx read cycle 1, (cs# = oe# = v il , we# = v ih ) read cycle 2 (we# = v ih ) cs# oe# write cycle 1, we# controlled cs# we# write cycle 2, cs# controlled cs# we# figure 3 C timing waveform - read cycle figure 5 C write cycle - cs# controlled figure 4 C write cycle - we# controlled
5 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs ws128k32-xg2txe december 2000 rev. 0 advanced package 510: 68 lead, ceramic quad flat pack, cqfp (g2t) all linear dimensions are millimeters and parenthetically in inches the white 68 lead g2t cqfp ? lls the same ? t and function as the jedec 68 lead cqfj or 68 plcc. but the g2t has the tce and lead inspection advantage of the cqfp form. 0.38 (0.015) 0.05 (0.002) 0.27 (0.011) 0.04 (0.002) 25.15 (0.990) 0.26 (0.010) sq 1.27 (0.050) typ 24.03 (0.946) 0.26 (0.010) 22.36 (0.880) 0.26 (0.010) sq 20.3 (0.800) ref 4.57 (0.180) max 0.19 (0.007) 0.06 (0.002) 23.87 (0.940) ref 1.0 (0.040) 0.127 (0.005) 0.25 (0.010) ref 1 / 7 r 0.25 (0.010) detail a see detail "a" pin 1 0.940" typ
6 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs ws128k32-xg2txe december 2000 rev. 0 advanced ordering information w s 128k 32 x - xxx x x e x lead finish: blank = gold plated leads a = solder dip leads e = epitaxial layer on die device grade: q = mil-std-883 compliant m = military screened -55c to +125c i = industrial -40c to +85c c = commercial 0c to +70c package type: g2t = 22.4mm ceramic quad flat pack, low pro? le cqfp (package 510) access time (ns) improvement mark: n = no connect at pin 8, 21, 28 and 39 in hip for upgrades organization, 128kx32 user con? gurable as 256kx16 or 512kx8 sram white electronic designs corporation * low power data retention only available in g2t package type
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